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參數(shù)資料
| 型號(hào)： | APTM60A11UT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 600 V, 0.132 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | APTM60A11UT1G |
APTM60A11UT1G
APT
M
60A11UT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
5 – 5
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
0
0.2
0.4
0.6
0.8
1
1.2
VSD, Source to Drain Voltage (V)
I SD
,
Reve
rs
e
Drai
n
Curr
e
n
t(A)
Drain Current vs Source to Drain Voltage
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
rma
lImpe
da
nc
e
(
°C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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| APTM60A23FT1G | 功能描述:MOSFET MODULE PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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