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參數(shù)資料
| 型號： | APTM60A11UT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 600 V, 0.132 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 139K |
| 代理商： | APTM60A11UT1G |
APTM60A11UT1G
APT
M
60A11UT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
4 – 5
Typical Performance Curve
Low Voltage Output Characteristics
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VGS=10V
Low Voltage Output Characteristics
6V
5.5V
0
20
40
60
80
100
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
TJ=125°C
VGS=7 &8V
Normalized RDSon vs. Temperature
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
on
,
D
rai
n
to
S
o
u
rce
ON
resi
stan
c
e
VGS=10V
ID=33A
Transfert Characteristics
TJ=25°C
TJ=125°C
0
20
40
60
80
100
01
2345
67
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5
duty cycle
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0
50
100
150
200
VDS, Drain to Source Voltage (V)
C
,C
a
pa
c
it
a
nc
e
(
pF)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
0
50
100
150
200
250
300
350
Gate Charge (nC)
V
GS
,G
a
te
t
o
Sour
c
e
V
o
lt
a
g
e
ID=33A
TJ=25°C
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