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參數(shù)資料
| 型號(hào)： | APTM60A11UT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 600 V, 0.132 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 139K |
| 代理商： | APTM60A11UT1G |
APTM60A11UT1G
APT
M
60A11UT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
1 – 5
1
8
7
Q1
Q2
56
3
4
11
NTC
12
9
10
2
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
40
ID
Continuous Drain Current
Tc = 80°C
30
IDM
Pulsed Drain current
245
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
132
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
33
A
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 8 Ultrafast FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Ultrafast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Phase leg
MOSFET Power Module
VDSS = 600V
RDSon = 110mΩ typ @ Tj = 25°C
ID = 40A @ Tc = 25°C
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