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參數(shù)資料
| 型號： | APTM50SKM35TG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 99 A, 500 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 12 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 294K |
| 代理商： | APTM50SKM35TG |
APTM50SKM35TG
A
www.microsemi.com
6 – 6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
0
20
40
I
D
, Drain Current (A)
60
80 100 120 140 160
t
d
d
V
DS
=333V
R
G
=1
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
0
20
40
I
D
, Drain Current (A)
60
80 100 120 140 160
t
r
f
V
DS
=333V
R
G
=1
T
J
=125°C
L=100μH
Switching Energy vs Current
E
on
E
off
0
1
2
3
4
5
6
0
20
40
I
D
, Drain Current (A)
60
80 100 120 140 160
S
V
DS
=333V
R
G
=1
T
J
=125°C
L=100μH
E
on
E
off
E
off
0
2
4
6
8
10
0
5
10
15
20
25
Gate Resistance (Ohms)
S
Switching Energy vs Gate Resistance
V
DS
=333V
I
D
=99A
T
J
=125°C
L=100μH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
450
10
20
30
I
D
, Drain Current (A)
40
50
60
70
80
90
F
Operating Frequency vs Drain Current
V
DS
=333V
D=50%
R
G
=1
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
V
SD
, Source to Drain Voltage (V)
1
1.2 1.4 1.6 1.8
I
D
,
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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