參數(shù)資料
型號: APTM50TDUM65PG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: Triple dual common source MOSFET Power Module
中文描述: 51 A, 500 V, 0.078 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP6-P, 21 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 300K
代理商: APTM50TDUM65PG
APTM50TDUM65PG
A
www.microsemi.com
1 – 6
S3/S4
G5
D5
S5
S5/S6
S1
D1
G1
S1S2
S3
D3
G3
D6
S6
G6
D2
G2
S2
D4
S4
G4
G5
G6
S6
S5
G3
D 3
D 5
S3/S4
G4
S4
D 6
D 4
S3
D 1
S5/S6
S2
G2
S1
G1
D 2
S1/S2
Absolute maximum ratings
Symbol
V
DSS
Drain - Source Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
See application note
APT0502 on www.microsemi.com
Parameter
Max ratings
500
51
38
204
±30
78
390
51
50
3000
Unit
V
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
I
D
Continuous Drain Current
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
V
m
W
A
mJ
V
DSS
= 500V
R
DSon
= 65m
typ @ Tj = 25°C
I
D
= 51A @ Tc = 25°C
Application
Features
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS 7
MOSFETs
-
Low R
DSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS Compliant
Triple dual common source
MOSFET Power Module
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