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參數(shù)資料
| 型號(hào)： | APTM50SKM35TG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 99 A, 500 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 12 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 294K |
| 代理商： | APTM50SKM35TG |
APTM50SKM35TG
A
www.microsemi.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
8V
0
100
200
300
400
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
V
GS
=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
50
100
150
200
250
300
0
2
4
6
8
V
GS
, Gate to Source Voltage (V)
I
D
,
V
DS
> I
D
(on)xR
DS
(on)MAX
250μs pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
0
20
40
60
80
100
120
I
D
, Drain Current (A)
R
D
(
Normalized to
V
GS
=10V @ 49.5A
0
10
20
30
40
50
60
70
80
90
100
25
50
T
C
, Case Temperature (°C)
75
100
125
150
I
D
,
DC Drain Current vs Case Temperature
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