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參數(shù)資料
| 型號(hào)： | APTM50HM75SCTG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Full bridge Series & SiC parallel diodes MOSFET Power Module |
| 中文描述： | 46 A, 500 V, 0.09 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 14 PIN |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 318K |
| 代理商： | APTM50HM75SCTG |
APTM50HM75SCTG
A
www.microsemi.com
8 – 8
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.00001
0.0001
0.001
Rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
3.5
V
F
Forward Voltage (V)
I
F
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
50
100
150
200
250
300
350
400
200
300
400
500
600
700
800
V
R
Reverse Voltage (V)
I
R
Capacitance vs.Reverse Voltage
0
100
200
300
400
500
600
700
800
1
10
100
1000
V
R
Reverse Voltage
C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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| APTM50HM75STG | 功能描述:MOSFET MOD FULL BRDG SER/PAR SP4 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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