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參數(shù)資料
| 型號(hào)： | APTM50HM75SCTG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Full bridge Series & SiC parallel diodes MOSFET Power Module |
| 中文描述： | 46 A, 500 V, 0.09 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 14 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 318K |
| 代理商： | APTM50HM75SCTG |
APTM50HM75SCTG
A
www.microsemi.com
3 – 8
Parallel diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
600
Typ
100
200
20
1.6
2.0
Max
400
2000
1.8
2.4
Unit
V
T
j
= 25°C
T
j
= 175°C
Tc = 125°C
T
j
= 25°C
T
j
= 175°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F
DC Forward Current
A
V
F
Diode Forward Voltage
I
F
= 20A
V
Q
C
Total Capacitive Charge
I
F
= 20A, V
R
= 300V
di/dt =800A/μs
f = 1MHz, V
R
= 200V
f = 1MHz, V
R
= 400V
28
nC
130
100
Q
Total Capacitance
pF
Thermal and package characteristics
Symbol Characteristic
Min
2500
-40
-40
-40
2.5
Typ
Max
0.35
1.2
1.5
150
125
100
4.7
160
Unit
Transistor
Series diode
Parallel diode
R
thJC
Junction to Case Thermal Resistance
°C/W
V
ISOL
T
J
T
STG
T
C
Torque Mounting torque
Wt
Package Weight
RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
V
°C
To Heatsink
M5
N.m
g
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.15 K
=
B
exp
85
/
25
Min
Typ
50
3952
Max
Unit
k
K
T
T
R
R
T
1
1
25
25
SP4 Package outline
(dimensions in mm)
T: Thermistor temperature
R
T
: Thermistor value at T
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