參數(shù)資料
型號: APTM50HM75STG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: Full bridge Series & parallel diodes MOSFET Power Module
中文描述: 46 A, 500 V, 0.09 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, MODULE-14
文件頁數(shù): 1/6頁
文件大小: 297K
代理商: APTM50HM75STG
APTM50HM75STG
A
www.microsemi.com
1 – 6
OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3B
CR1B
G2
S2
NTC1
CR2B
Q2
CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS
OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4
Absolute maximum ratings
Symbol
V
DSS
Drain - Source Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
See application note
APT0502 on www.microsemi.com
Parameter
Max ratings
500
46
34
184
±30
90
357
46
50
2500
Unit
V
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
I
D
Continuous Drain Current
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
V
m
W
A
mJ
V
DSS
= 500V
R
DSon
= 75m
typ @ Tj = 25°C
I
D
= 46A @ Tc = 25°C
Application
Features
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS 7
MOSFETs
-
Low R
DSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS compliant
Full bridge
Series & parallel diodes
MOSFET Power Module
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