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參數(shù)資料
| 型號(hào)： | APTM50HM75FTG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Full - Bridge MOSFET Power Module |
| 中文描述： | 46 A, 500 V, 0.09 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 14 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 303K |
| 代理商： | APTM50HM75FTG |
APTM20HM10F
A
APT website – http://www.advancedpower.com
5 – 6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
B
D
,
V
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
R
D
(
(
V
GS
=10V
I
D
= 87.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25
50
75 100 125 150
T
C
, Case Temperature (°C)
V
G
(
(
Maximum Safe Operating Area
DC line
10ms
1ms
100μs
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
limited by
R
DSon
Single pulse
T
J
=150°C
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
Capacitance vs Drain to Source Voltage
V
DS
=40V
V
DS
=100V
V
DS
=160V
0
2
4
6
8
10
12
0
50
100
150
200
250
Gate Charge (nC)
V
G
,
Gate Charge vs Gate to Source Voltage
I
D
=150A
T
J
=25°C
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