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參數(shù)資料
| 型號： | APTM50HM75FTG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Full - Bridge MOSFET Power Module |
| 中文描述： | 46 A, 500 V, 0.09 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 14 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 303K |
| 代理商： | APTM50HM75FTG |
APTM20HM10F
A
APT website – http://www.advancedpower.com
2 – 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
Test Conditions
V
GS
= 0V, I
D
= 375μA
V
GS
= 0V,V
DS
= 200V
V
GS
= 0V,V
DS
= 160V
V
GS
= 10V, I
D
= 87.5A
V
GS
= V
DS
, I
D
= 5mA
V
GS
= ±30
V, V
DS
= 0V
Min
200
3
Typ
Max
375
1500
10
5
±150
Unit
V
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
gs
Gate – Source Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
13.7
4.36
0.2
224
Max
Unit
nF
86
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 100V
I
D
= 150A
94
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
28
56
81
Fall Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 133V
I
D
= 150A
R
G
= 2.5
99
ns
E
on
Turn-on Switching Energy
926
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 150A,
R
G
= 2.5
910
μJ
E
on
Turn-on Switching Energy
1216
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 150A,
R
G
= 2.5
1062
μJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Continuous Source current
(Body diode)
V
SD
Diode Forward Voltage
dv/dt
Peak Diode Recovery
Test Conditions
Min
Typ
2.14
5.8
Max
175
131
1.3
8
220
420
Unit
Tc = 25°C
Tc = 80°C
I
S
A
V
GS
= 0V, I
S
= - 150A
V
V/ns
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
S
= -150A
V
R
= 133V
di
S
/dt = 200A/μs
μC
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 150A di/dt 700A/μs V
R
V
DSS
T
j
150°C
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