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參數(shù)資料
| 型號： | APTGT50X170BTP3 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 70 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 269K |
| 代理商： | APTGT50X170BTP3 |
APTGT50X170RTP3
APTGT50X170BTP3
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APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGT50X170BTP3) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
V
TC = 25°C
70
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
310
W
IF
DC Forward Current
TC = 80°C
50
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
70
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
310
W
RBSOA Reverse Bias Save Operating Area
Tj = 125°C
100A @ 1700V
IF
DC Forward Current
TC = 80°C
50
IFRM
Repetitive Peak Forward Current
tp = 1ms
100
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
3
mA
VF
Forward Voltage
IF = 50A
Tj = 150°C
1.0
V
RthJC
Junction to Case
0.65
°C/W
IGBT Brake & Diode (only for APTGT50X170BTP3) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
6
mA
Tj = 25°C
2.0
2.4
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 50A
Tj = 125°C
2.4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 2.5mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Cies
Input Capacitance
4400
Cres
Reverse Transfer Capacitance
VGE = 0V,VCE = 25V
f = 1MHz
150
pF
Tj = 25°C
1.8
2.2
VF
Forward Voltage
VGE = 0V
IF = 50A
Tj = 125°C
1.9
V
IGBT
0.4
RthJC
Junction to Case
Diode
0.7
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGT50X170RTP3 | 70 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X60T3G | 80 A, 600 V, N-CHANNEL IGBT |
| APTGT600DU60 | 500 A, 600 V, N-CHANNEL IGBT |
| APTGT600DU60 | 500 A, 600 V, N-CHANNEL IGBT |
| APTGT600U120D4G | 880 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT50X170BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X170RTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X170TRPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X60T3G | 功能描述:IGBT TRENCH 3PHASE BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT580U60D4G | 功能描述:IGBT 600V 760A 1600W D4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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