參數(shù)資料
型號: APTGT600U120D4G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 880 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-4
文件頁數(shù): 1/5頁
文件大?。?/td> 199K
代理商: APTGT600U120D4G
APTGT600U120D4G
APT
G
T
600U120D
4G
Rev
2
July,
2008
www.microsemi.com
1- 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
900
IC
Continuous Collector Current
TC = 80°C
600
ICM
Pulsed Collector Current
TC = 25°C
1200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
2500
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
1200A@1050V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
3
5
2
1
VCES = 1200V
IC = 600A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Single switch
Trench + Field Stop IGBT
Power Module
相關(guān)PDF資料
PDF描述
APTGT600U120D4 880 A, 1200 V, N-CHANNEL IGBT
APTGT600U120D4 880 A, 1200 V, N-CHANNEL IGBT
APTGT600U170D4G 1100 A, 1700 V, N-CHANNEL IGBT
APTGT750U60D4G IGBT
APTGT75A120D1 110 A, 1200 V, N-CHANNEL IGBT
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