參數(shù)資料
型號(hào): APTGT50DU120T
廠商: Advanced Power Technology Ltd.
英文描述: Dual common source Fast Trench + Field Stop IGBT Power Module
中文描述: 雙共源快速戴場(chǎng)站IGBT功率模塊
文件頁(yè)數(shù): 4/5頁(yè)
文件大小: 287K
代理商: APTGT50DU120T
APTGT50DU120T
A
APT website – http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
0
0.5
1
1.5
V
CE
(V)
2
2.5
3
3.5
I
C
(
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
20
40
60
80
100
0
1
2
3
4
V
CE
(V)
I
C
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
20
40
60
80
100
5
6
7
8
V
GE
(V)
9
10
11
12
I
C
Energy losses vs Collector Current
Eon
Eon
Eoff
Er
0
2
4
6
8
10
12
0
20
40
60
80
100
I
C
(A)
E
V
CE
= 600V
V
GE
= 15V
R
G
= 18
T
J
= 125°C
Eon
Eoff
Er
0
2
4
6
8
10
12
0
10
20
Gate Resistance (ohms)
30
40
50
60
70
80
E
V
CE
= 600V
V
GE
=15V
I
C
= 50A
T
J
= 125°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
20
40
60
80
100
120
0
300
600
900
1200
1500
V
CE
(V)
I
C
V
GE
=15V
T
J
=125°C
R
G
=18
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.00001
0.0001
0.001
rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
IGBT
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APTGT50DU120TG 功能描述:IGBT MOD TRENCH DUAL SOURCE SP4 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
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