參數(shù)資料
型號: APTGT50H120T
廠商: Advanced Power Technology Ltd.
英文描述: Full - Bridge Fast Trench + Field Stop IGBT Power Module
中文描述: 全-橋快速戴場站IGBT功率模塊
文件頁數(shù): 1/5頁
文件大?。?/td> 288K
代理商: APTGT50H120T
APTGT50H120T
A
APT website – http://www.advancedpower.com
1 - 5
Application
Features
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
75
50
100
±20
277
100A @ 1150V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
OUT1
OUT2
Q3
Q4
E3
G3
0/VBUS
E4
G4
NTC2
G2
E2
NTC1
Q2
Q1
G1
E1
OUT1
OUT2
NTC1
NTC2
G3
E3
VBUS
G1
E1
G4
G2
E2
0/VBUS
E4
V
CES
= 1200V
I
C
= 50A @ Tc = 80°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Fast Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Full - Bridge
Fast Trench + Field Stop IGBT
Power Module
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT50H120T3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge Trench IGBT Power Module
APTGT50H120T3AG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT50H120T3G 功能描述:IGBT MOD TRENCH FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT50H120TG 功能描述:IGBT MOD TRENCH FULL BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT50H170T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge Trench + Field Stop IGBT Power Module