參數(shù)資料
型號: APTGT50H60T3
廠商: Advanced Power Technology Ltd.
英文描述: Full - Bridge Trench + Field Stop IGBT Power Module
中文描述: 全-橋戴場站IGBT功率模塊
文件頁數(shù): 1/5頁
文件大小: 294K
代理商: APTGT50H60T3
APTGT50H60T3
A
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
600
80
50
100
±20
176
100A @ 550V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
J
= 150°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
A
V
W
Q3
11
10
Q1
CR1
7
22
13
14
CR3
3
30
29
32
18
19
23
8
15
31
R1
16
4
CR4
CR2
Q2
Q4
26
27
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
V
CES
= 600V
I
C
= 50A @ Tc = 80°C
Application
Features
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
Trench + Field Stop IGBT
Power Module
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