參數(shù)資料
型號: APTGF50DDA60T3G
廠商: Advanced Power Technology Ltd.
英文描述: Dual Boost Chopper NPT IGBT Power Module
中文描述: 雙升壓斬波不擴(kuò)散核武器條約IGBT功率模塊
文件頁數(shù): 5/6頁
文件大?。?/td> 326K
代理商: APTGF50DDA60T3G
APTGF50DDA60T3G
A
APT website – http://www.advancedpower.com
5 - 6
V
GE
= 15V
20
30
40
50
60
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
Turn-On Delay Time vs Collector Current
Tj = 125°C
V
CE
= 400V
R
G
= 2.7
V
GE
=15V,
T
J
=25°C
V
GE
=15V,
T
J
=125°C
50
75
100
125
150
175
200
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
V
CE
= 400V
R
G
= 2.7
V
GE
=15V,
T
J
=125°C
0
10
20
30
40
50
60
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
Current Rise Time vs Collector Current
V
CE
= 400V
R
G
= 2.7
T
J
= 25°C
T
J
= 125°C
0
10
20
30
40
50
60
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
Current Fall Time vs Collector Current
V
CE
= 400V, V
GE
= 15V, R
G
= 2.7
T
J
=125°C,
V
GE
=15V
0
0.5
1
1.5
2
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
E
o
,
Turn-On Energy Loss vs Collector Current
V
CE
= 400V
R
G
= 2.7
T
J
= 125°C
0
0.5
1
1.5
2
2.5
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
E
o
,
Turn-Off Energy Loss vs Collector Current
V
CE
= 400V
V
GE
= 15V
R
G
= 2.7
Eon, 50A
Eon, 50A
Eoff, 50A
0
0.5
1
1.5
2
2.5
3
0
5
Gate Resistance (Ohms)
10
15
20
25
Switching Energy Losses vs Gate Resistance
S
V
CE
= 400V
V
GE
= 15V
T
J
= 125°C
0
20
40
60
80
100
120
0
200
400
600
I
C
,
Reverse Bias Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
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