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參數(shù)資料
| 型號(hào)： | APTGF30H60T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, MODULE-25 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大小： | 292K |
| 代理商： | APTGF30H60T3G |
APTGF30H60T3G
A
P
T
G
F
30
H
60T
3G
–
R
ev
1
J
ul
y,
2006
www.microsemi.com
5 - 6
V
GE = 15V
10
20
30
40
50
0
10203040506070
ICE, Collector to Emitter Current (A)
td
(on)
,Tur
n-
O
n
D
el
ay
Ti
m
e
(n
s)
Turn-On Delay Time vs Collector Current
Tj = 125°C
V
CE = 400V
R
G = 6.8
V
GE=15V,
TJ=25°C
VGE=15V,
T
J=125°C
25
50
75
100
125
0
10
20
30
40
50
60
70
ICE, Collector to Emitter Current (A)
td
(o
ff),
T
u
rn
-O
ff
D
el
ay
T
im
e
(n
s)
Turn-Off Delay Time vs Collector Current
V
CE = 400V
R
G = 6.8
V
GE=15V,
T
J=125°C
0
10
20
30
40
50
0
10
20
30405060
70
ICE, Collector to Emitter Current (A)
tr
,R
is
e
T
im
e(
n
s)
Current Rise Time vs Collector Current
V
CE = 400V
R
G = 6.8
T
J = 25°C
T
J = 125°C
0
10
20
30
40
50
0
1020304050
6070
ICE, Collector to Emitter Current (A)
tf
,F
all
T
ime
(
n
s)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 6.8
T
J=125°C,
V
GE=15V
0
0.25
0.5
0.75
1
0
10203040506070
ICE, Collector to Emitter Current (A)
E
on
,
Tur
n-
O
n
E
n
er
gy
Los
s
(m
J)
Turn-On Energy Loss vs Collector Current
V
CE = 400V
RG = 6.8
T
J = 125°C
0
0.5
1
1.5
2
0
102030405060
70
ICE, Collector to Emitter Current (A)
E
of
f,
Tur
n-
of
f
E
n
er
gy
Los
s(
m
J)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
V
GE = 15V
R
G = 6.8
Eon, 30A
Eoff, 30A
0
0.25
0.5
0.75
1
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
S
w
it
ch
in
g
E
n
e
rg
yL
o
sses
(m
J
)
VCE = 400V
V
GE = 15V
T
J= 125°C
0
10
20
30
40
50
60
70
0
100
200
300
400
500
600
I C
,C
o
ll
ec
tor
C
u
rr
ent
(
A
)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
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