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參數(shù)資料
| 型號： | APTGF30H60T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, MODULE-25 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 292K |
| 代理商： | APTGF30H60T3G |
APTGF30H60T3G
A
P
T
G
F
30
H
60T
3G
–
R
ev
1
J
ul
y,
2006
www.microsemi.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
500
A
Tj = 25°C
1.7
2.0
2.45
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 30A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1350
Coes
Output Capacitance
193
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
120
pF
Qg
Total gate Charge
99
Qge
Gate – Emitter Charge
10
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC =30A
60
nC
Td(on)
Turn-on Delay Time
30
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
80
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8
15
ns
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
90
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8
21
ns
Eon
Turn-on Switching Energy
Tj = 125°C
0.3
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8
Tj = 125°C
0.8
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
15
A
IF = 15A
1.6
1.8
IF = 30A
1.9
VF
Diode Forward Voltage
IF = 15A
Tj = 125°C
1.4
V
Tj = 25°C
40
trr
Reverse Recovery Time
Tj = 125°C
150
ns
Tj = 25°C
95
Qrr
Reverse Recovery Charge
IF = 15A
VR = 400V
di/dt =200A/s
Tj = 125°C
520
nC
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| APTGF30TL601G | 功能描述:POWER MODULE IGBT 600V 30A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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