參數(shù)資料
型號: APTGF330DA60D3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 460 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 1/3頁
文件大?。?/td> 176K
代理商: APTGF330DA60D3G
APTGF330DA60D3
A
PT
G
F3
30
D
A
60
D
3
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
460
IC
Continuous Collector Current
TC = 80°C
330
ICM
Pulsed Collector Current
TC = 25°C
800
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
1400
W
RBSOA Reverse Bias Safe Operation Area
Tj = 125°C
800A@420V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
2
3
5
4
6
7
1
VCES = 600V
IC = 330A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Non Punch Through (NPT) fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M6 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Boost Chopper
NPT IGBT Power Module
相關(guān)PDF資料
PDF描述
APTGF330DA60D3 460 A, 600 V, N-CHANNEL IGBT
APTGF330DA60D3 460 A, 600 V, N-CHANNEL IGBT
APTGF330SK60D3G 460 A, 600 V, N-CHANNEL IGBT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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