參數(shù)資料
型號: APTGF25X120T3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 40 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP3, 25 PIN
文件頁數(shù): 6/6頁
文件大?。?/td> 228K
代理商: APTGF25X120T3G
APTGF25X120T3G
APT
G
F25X120T
3G
Rev
0
July,
2007
www.microsemi.com
6- 6
Cies
Cres
Coes
10
100
1000
10000
0
1020
3040
50
C,
C
a
pa
ci
ta
n
ce
(
p
F)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
T
h
e
rm
al
I
m
pe
da
nc
e
(°C/
W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
switching
0
20
40
60
80
100
120
0
1020
3040
IC, Collector Current (A)
Operating Frequency vs Collector Current
Fm
ax
,O
p
e
rat
in
g
F
req
ue
nc
y
(
k
Hz
)
VCE = 600V
D = 50%
RG = 22
TJ = 125°C
TC= 75°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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