參數(shù)資料
型號： APTGF300DA120G
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 400 A, 1200 V, N-CHANNEL IGBT
封裝： ROHS COMPLIANT, SP6, MODULE-5
文件頁數(shù)： 1/5頁
文件大?。?/td> 242K
代理商： APTGF300DA120G
APTGF300DA120G
A
P
T
G
F
300
D
A
120
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
1 - 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
400
IC
Continuous Collector Current
Tc = 80°C
300
ICM
Pulsed Collector Current
Tc = 25°C
600
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
1780
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 150°C
600A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G2
E2
Q2
0/VBUS
OUT
CR1
VBUS
OUT
0/VBUS
G2
E2
VCES = 1200V
IC = 300A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Non Punch Through (NPT) FAST IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Boost chopper
NPT IGBT Power Module
相關(guān)PDF資料
PDF描述
APTGF300DU120 400 A, 1200 V, N-CHANNEL IGBT
APTGF300DU120 400 A, 1200 V, N-CHANNEL IGBT
APTGF300SK120D3G IGBT
APTGF300SK120G 400 A, 1200 V, N-CHANNEL IGBT
APTGF300SK120 400 A, 1200 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF300DU120 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source NPT IGBT Power Module
APTGF300DU120G 功能描述:IGBT MODULE NPT DUAL SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGF300DU120G_07 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Dual Common Source NPT IGBT Power Module
APTGF300SK120 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper NPT IGBT Power Module
APTGF300SK120D3G 功能描述:IGBT 1200V 420A 2100W D3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
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