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參數(shù)資料
| 型號(hào)： | APTGF300DA120G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 400 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP6, MODULE-5 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 242K |
| 代理商： | APTGF300DA120G |
APTGF300DA120G
A
P
T
G
F
300
D
A
120
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
500
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
750
A
Tj = 25°C
3.3
3.9
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 300A
Tj = 125°C
4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 12mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±1
A
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
21
Coes
Output Capacitance
2.9
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
1.52
nF
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
310
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 300A
RG = 3
30
ns
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
360
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 300A
RG = 3
40
ns
Eon
Turn-on Switching Energy
Tj = 125°C
25
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 300A
RG = 3
Tj = 125°C
15
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
750
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
1000
A
IF
DC Forward Current
Tc = 70°C
400
A
IF = 400A
2.0
2.5
IF = 800A
2.5
VF
Diode Forward Voltage
IF = 400A
Tj = 125°C
1.8
V
Tj = 25°C
420
trr
Reverse Recovery Time
Tj = 125°C
580
ns
Tj = 25°C
5
Qrr
Reverse Recovery Charge
IF = 400A
VR = 800V
di/dt =800A/s
Tj = 125°C
21.4
C
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| APTGF300DU120 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source NPT IGBT Power Module |
| APTGF300DU120G | 功能描述:IGBT MODULE NPT DUAL SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF300DU120G_07 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Dual Common Source NPT IGBT Power Module |
| APTGF300SK120 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper NPT IGBT Power Module |
| APTGF300SK120D3G | 功能描述:IGBT 1200V 420A 2100W D3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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