參數(shù)資料
型號(hào): APTGF180DU60T
廠商: Advanced Power Technology Ltd.
英文描述: Dual common source NPT IGBT Power Module
中文描述: 雙共源不擴(kuò)散核武器條約IGBT功率模塊
文件頁(yè)數(shù): 6/6頁(yè)
文件大?。?/td> 311K
代理商: APTGF180DU60T
APTGF180DU60T
A
APT website – http://www.advancedpower.com
6 - 6
Cies
Cres
Coes
100
1000
10000
100000
0
10
20
30
40
50
C
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0
100
200
300
400
500
600
700
0
200
400
600
800
I
C
,
Minimum Switching Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
0.9
0.35
0.25
0.15
0.05
0.025
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.00001
0.0001
0.001
Rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
0
20
40
60
80
100
40
80
120
160
200
240
I
C
, Collector Current (A)
F
m
,
V
CE
= 400V
D = 50%
R
G
= 2.5
T
J
= 125°C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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