參數(shù)資料
型號(hào): APTGF15X120P2
廠商: Advanced Power Technology Ltd.
英文描述: 3 Phase bridge NPT IGBT Power Module
中文描述: 3相橋不擴(kuò)散核武器條約IGBT功率模塊
文件頁數(shù): 4/4頁
文件大?。?/td> 191K
代理商: APTGF15X120P2
APTGF15X120E2
APTGF15X120P2
A
APT website – http://www.advancedpower.com
4 - 4
Package outline
Pin out: APTGF15X120P2
(Short pins)
ALL DIMENSIONS MARKED" * " ARE TOLERENCEDAS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF15X120P2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF15X120T3G 功能描述:IGBT MODULE NPT 3PH BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGF15X60BTP2 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
APTGF15X60BTP2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF15X60RTP2 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module