參數(shù)資料
型號： APTGF15X120P2
廠商： Advanced Power Technology Ltd.
英文描述： 3 Phase bridge NPT IGBT Power Module
中文描述： 3相橋不擴散核武器條約IGBT功率模塊
文件頁數(shù)： 2/4頁
文件大?。?/td> 191K
代理商： APTGF15X120P2
APTGF15X120E2
APTGF15X120P2
A
APT website – http://www.advancedpower.com
2 - 4
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V
V
CE
= 1200V
V
GE
=15V
I
C
= 15A
V
GE
= V
CE
, I
C
= 0.6 mA
V
GE
= 20V, V
CE
= 0V
Min
1200
4.5
Typ
300
1200
2.5
3.1
5.5
Max
500
3.0
3.7
6.5
150
Unit
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
μA
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 15A
R
G
= 82
Min
Typ
1000
150
70
55
45
400
70
Max
110
90
600
100
Unit
pF
ns
Test Conditions
I
F
= 15A
V
GE
= 0V
I
F
= 15A
V
R
= 600V
di/dt =800A/μs
I
F
= 15A
V
= 600V
di/dt =800A/μs T
j
= 125°C
Min
Typ
2.4
1.9
Max
2.9
Unit
T
j
= 25°C
T
j
= 125°C
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
T
j
= 125°C
0.1
μs
T
j
= 25°C
1
Q
rr
Reverse Recovery Charge
3
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.85
1.5
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
2500
V
T
J
T
STG
T
C
-40
-40
-40
2
150
125
125
3.5
185
°C
To Heatsink
M5
N.m
g
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF15X120P2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF15X120T3G 功能描述:IGBT MODULE NPT 3PH BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGF15X60BTP2 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
APTGF15X60BTP2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF15X60RTP2 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
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