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參數(shù)資料
| 型號： | APT81H50B2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 81 A, 500 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 262K |
| 代理商： | APT81H50B2 |
VGS= 7, & 10V
T
J = 125°C
T
J = 25°C
T
J = -55°C
VGS = 10V
6V
V
DS> ID(ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 42A
T
J = 125°C
T
J = 25°C
T
J = -55°C
C
oss
C
iss
I
D = 42A
V
DS = 400V
V
DS = 100V
V
DS = 250V
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 150°C
T
J = 25°C
TJ = 125°C
T
J = 150°C
C
rss
5V
5.5V
6.5V
V
GS
,GATE-TO-SOURCE
VOLTAGE
(V)
g fs
,TRANSCONDUCTANCE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(A)
I SD,
REVERSE
DRAIN
CURRENT
(A)
C,
CAPACITANCE
(pF)
I D
,DRAIN
CURRENT
(A)
I D
,DRIAN
CURRENT
(A)
V
DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
Figure 2, Output Characteristics
T
J, JUNCTION TEMPERATURE (°C)
V
GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 3, RDS(ON) vs Junction Temperature
Figure 4, Transfer Characteristics
I
D, DRAIN CURRENT (A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5, Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
Q
g, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0
5
10
15
20
25
0
5
10
15
20
25
30
-55 -25
0
25
50
75 100 125 150
0
1
2
3
4
5
6
7
8
0
10 20 30 40 50 60 70 80 90
0
100
200
300
400
500
0
100
200
300
400
500
0
0.3
0.6
0.9
1.2
1.5
300
250
200
150
100
50
0
2.5
2.0
1.5
1.0
0.5
0
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
140
120
100
80
60
40
20
0
280
240
200
160
120
80
40
0
20,000
10,000
1000
100
10
280
240
200
160
120
80
40
0
APT81H50B2_L
050-8142
Rev
A
6-2007
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| APT84F50B2 | 功能描述:MSOFET N-CH 500V 84A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT84F50L | 功能描述:MSOFET N-CH 500V 84A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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