參數(shù)資料
型號： APT81H50B2
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 81 A, 500 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 262K
代理商： APT81H50B2
Static Characteristics
TJ = 25°C unless otherwise specied
Source-Drain Diode Characteristics
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT81H50B2_L
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J = 25°C, L = 2.08mH, RG = 2.2, IAS = 42A.
3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
4 C
o(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 C
o(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
V
DS less than V(BR)DSS, use this equation: Co(er) = -3.14E-7/VDS^2 + 7.31E-8/VDS + 2.09E-10.
6 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.
G
D
S
Unit
V
V/°C
V
mV/°C
A
nA
Unit
S
pF
nC
ns
Unit
A
V
ns
C
A
V/ns
Min
Typ
Max
500
0.60
0.059
0.070
3
4
5
-10
250
1000
±100
Min
Typ
Max
65
13500
185
1455
845
425
340
75
155
60
70
155
50
Min
Typ
Max
81
270
1.0
260
480
1.50
3.93
9.6
14.2
30
Test Conditions
V
GS = 0V, ID = 250A
Reference to 25°C, I
D = 250A
V
GS = 10V, ID = 42A
V
GS = VDS, ID = 2.5mA
V
DS = 500V
T
J = 25°C
V
GS = 0V
T
J = 125°C
V
GS = ±30V
Test Conditions
V
DS = 50V, ID = 42A
V
GS = 0V, VDS = 25V
f = 1MHz
V
GS = 0V, VDS = 0V to 333V
V
GS = 0 to 10V, ID = 42A,
V
DS = 250V
Resistive Switching
V
DD = 333V, ID = 42A
R
G = 2.2
6
, V
GG = 15V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
SD = 42A, TJ = 25°C, VGS = 0V
T
J = 25°C
T
J = 125°C
I
SD = 42A
3
T
J = 25°C
di
SD/dt = 100A/s
T
J = 125°C
V
DD = 100V
T
J = 25°C
T
J = 125°C
I
SD ≤ 42A, di/dt ≤1000A/s, VDD = 333V,
T
J = 125°C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
Symbol
V
BR(DSS)
V
BR(DSS)/TJ
R
DS(on)
V
GS(th)
V
GS(th)/TJ
I
DSS
I
GSS
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
4
C
o(er)
5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
rrm
dv/dt
050-8142
Rev
A
6-2007
相關(guān)PDF資料
PDF描述
APT83GU30B 100 A, 300 V, N-CHANNEL IGBT, TO-247AD
APT83GU30S 100 A, 300 V, N-CHANNEL IGBT
APT83GU30BG 100 A, 300 V, N-CHANNEL IGBT, TO-247AD
APT83GU30S 100 A, 300 V, N-CHANNEL IGBT
APT83GU30B 100 A, 300 V, N-CHANNEL IGBT, TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT81H50L 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 81A 3-Pin(3+Tab) TO-264 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR
APT83GU30B 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT83GU30S 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT84F50B2 功能描述:MSOFET N-CH 500V 84A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT84F50L 功能描述:MSOFET N-CH 500V 84A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*