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參數(shù)資料
| 型號： | APT80GA60B2D40 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 143 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMPLIANT, TO-247, TMAX-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 159K |
| 代理商： | APT80GA60B2D40 |
052-6342
Rev
A
4
-
2008
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Symbol
Characteristic / Test Conditions
APT80GA60B2D40_LD40
Unit
I
F(AV)
Maximum Average Forward Current (T
C = 111°C, Duty Cycle = 0.5)
40
Amps
I
F(RMS)
RMS Forward Current (Square wave, 50% duty)
63
I
FSM
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3 ms)
320
Symbol
Characteristic / Test Conditions
Min
Type
Max
Unit
V
F
Forward Voltage
I
F = 40A
2.0
Volts
I
F = 80A
2.5
I
F = 40A, TJ = 125°C
1.7
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
t
rr
Reverse Recovery Time
I
F = 1A,
di
F/dt = -100A/s,
V
R = 30V, TJ = 25°C
-
22
-
ns
t
rr
Reverse Recovery Time
I
F
= 40A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 25°C
-
25
-
Q
rr
Reverse Recovery Charge
-
35
-
nC
I
RRM
Maximum Reverse Recovery Current
-
3
-
Amps
t
rr
Reverse Recovery Time
I
F
= 40A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 125°C
-
160
-ns
Q
rr
Reverse Recovery Charge
-
480
-
nC
I
RRM
Maximum Reverse Recovery Current
-
6
-
Amps
t
rr
Reverse Recovery Time
I
F
= 40A, di
F
/dt = -1000A/s
V
R
= 400V, T
C
= 125°C
-
85
-
ns
Q
rr
Reverse Recovery Charge
-
920
-nC
I
RRM
Maximum Reverse Recovery Current
-
20
-
Amps
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
D = 0.9
0.289
0.381
0.00448
0.120
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT80GA60LD40 | 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 8 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 143A 625W TO264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR 制造商:Microsemi 功能描述:Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264 |
| APT80GA60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT80GA90B | 功能描述:IGBT 900V 145A 625W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT80GA90LD40 | 功能描述:IGBT 900V 145A 625W TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT80GA90S | 制造商:Microsemi Corporation 功能描述:APT80GA90S - Rail/Tube |
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