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參數(shù)資料
| 型號： | APT80GA60B2D40 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 143 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMPLIANT, TO-247, TMAX-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 159K |
| 代理商： | APT80GA60B2D40 |
052-6342
Rev
A
4
-
2008
Thermal and Mechanical Characteristics
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT80GA60B2D40_LD40
Symbol
Characteristic
Min
Typ
Max
Unit
R
θJC
Junction to Case Thermal Resistance (IGBT)
-
0.2
°C/W
R
θJC
Junction to Case Thermal Resistance (Diode)
.67
W
T
Package Weight
-
6.1
-
g
Torque
Mounting Torque (TO-264 Package), 4-40 or M3 screw
10
inlbf
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
C
ies
Input Capacitance
Capacitance
V
GE = 0V, VCE = 25V
f = 1MHz
6390
pF
C
oes
Output Capacitance
580
C
res
Reverse Transfer Capacitance
63
Q
g
3
Total Gate Charge
Gate Charge
V
GE = 15V
V
CE= 300V
I
C = 47A
230
Q
ge
Gate-Emitter Charge
40
nC
Q
gc
Gate- Collector Charge
78
SSOA
Switching Safe Operating Area
T
J = 150°C, RG = 4.7Ω
4
, V
GE = 15V,
L= 100uH, V
CE = 600V
240
A
t
d(on)
Turn-On Delay Time
Inductive Switching (25°C)
V
CC = 400V
V
GE = 15V
I
C = 47A
R
G = 4.7Ω
4
T
J = +25°C
23
ns
t
r
Current Rise Time
27
t
d(off)
Turn-Off Delay Time
158
t
f
Current Fall Time
78
E
on2
Turn-On Switching Energy
840
μJ
E
off
6
Turn-Off Switching Energy
751
t
d(on)
Turn-On Delay Time
Inductive Switching (125°C)
V
CC = 400V
V
GE = 15V
I
C = 47A
R
G = 4.7Ω
4
T
J = +125°C
21
ns
t
r
Current Rise Time
31
t
d(off)
Turn-Off Delay Time
194
t
f
Current Fall Time
132
E
on2
Turn-On Switching Energy
1275
μJ
E
off
6
Turn-Off Switching Energy
1112
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E
on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT80GA60LD40 | 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 8 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 143A 625W TO264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR 制造商:Microsemi 功能描述:Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264 |
| APT80GA60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT80GA90B | 功能描述:IGBT 900V 145A 625W TO247 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT80GA90LD40 | 功能描述:IGBT 900V 145A 625W TO-264 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 8™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT80GA90S | 制造商:Microsemi Corporation 功能描述:APT80GA90S - Rail/Tube |
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