參數(shù)資料
型號(hào)： APT77H60J
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 77 A, 600 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, ISOTOP, 4 PIN
文件頁數(shù)： 4/4頁
文件大?。?/td> 273K
代理商： APT77H60J
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP) Package Outline
ISOTOP is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
0.0305
0.100
0.0830
1.07
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
X
T
1ms
100ms
Rds(on)
Scaling for Different Case & Junction
Temperatures:
I
D = ID(TC = 25°C)
*(T
J - TC)/125
DC line
100s
I
DM
10ms
13s
100s
I
DM
100ms
10ms
13s
Rds(on)
DC line
T
J = 150°C
T
C = 25°C
1ms
T
J = 125°C
T
C = 75°C
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
t1 = Pulse Duration
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
I D
,DRAIN
CURRENT
(A)
Figure 11, Transient Thermal Impedance Model
1
10
100
800
1
10
100
800
600
100
10
1
0.1
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
600
100
10
1
0.1
APT77H60J
050-8152
Rev
A
6-2007
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