參數(shù)資料
型號： APT77H60J
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 77 A, 600 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, ISOTOP, 4 PIN
文件頁數(shù)： 2/4頁
文件大小： 273K
代理商： APT77H60J
Static Characteristics
TJ = 25°C unless otherwise specied
Source-Drain Diode Characteristics
Dynamic Characteristics
TJ = 25°C unless otherwise specied
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J = 25°C, L = 1.86mH, RG = 2.2, IAS = 60A.
3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
4 C
o(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 C
o(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
V
DS less than V(BR)DSS, use this equation: Co(er) = -2.32E-7/VDS^2 + 9.75E-8/VDS + 3.64E-10.
6 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.
G
D
S
Unit
V
V/°C
V
mV/°C
A
nA
Unit
S
pF
nC
ns
Unit
A
V
ns
C
A
V/ns
Min
Typ
Max
600
0.57
0.050
0.065
3
4
5
-10
100
1000
±100
Min
Typ
Max
115
24000
245
2200
1170
605
600
130
250
135
155
410
125
Min
Typ
Max
77
445
1.0
260
300
460
550
2.08
5.54
11.6
17.8
30
Test Conditions
V
GS = 0V, ID = 250A
Reference to 25°C, I
D = 250A
V
GS = 10V, ID = 60A
V
GS = VDS, ID = 5mA
V
DS = 600V
T
J = 25°C
V
GS = 0V
T
J = 125°C
V
GS = ±30V
Test Conditions
V
DS = 50V, ID = 60A
V
GS = 0V, VDS = 25V
f = 1MHz
V
GS = 0V, VDS = 0V to 400V
V
GS = 0 to 10V, ID = 60A,
V
DS = 300V
Resistive Switching
V
DD = 400V, ID = 60A
R
G = 2.2
6
, V
GG = 15V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
SD = 60A, TJ = 25°C, VGS = 0V
T
J = 25°C
T
J = 125°C
I
SD = 60A
3
T
J = 25°C
di
SD/dt = 100A/s
T
J = 125°C
V
DD = 100V
T
J = 25°C
T
J = 125°C
I
SD ≤ 60A, di/dt ≤1000A/s, VDD = 400V,
T
J = 125°C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
Symbol
V
BR(DSS)
V
BR(DSS)/TJ
R
DS(on)
V
GS(th)
V
GS(th)/TJ
I
DSS
I
GSS
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
4
C
o(er)
5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
rrm
dv/dt
050-8152
Rev
A
6-2007
APT77H60J
相關(guān)PDF資料
PDF描述
APT8014L2FLL 52 A, 800 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT94N65B2C3 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
APTCV90TL12T3G 80 A, 1200 V, N-CHANNEL IGBT
APTGF180SK60TG 220 A, 600 V, N-CHANNEL IGBT
APTGF50DA120T1G 75 A, 1200 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT77N60BC6 功能描述:MOSFET N-CH 600V 77A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT77N60JC3 功能描述:MOSFET N-CH 600V 77A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:*
APT77N60JC3_09 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET
APT77N60SC6 制造商:Microsemi Corporation 功能描述:APT77N60SC6 - Bulk
APT7843 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:Touch Screen Controller
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*