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參數(shù)資料
| 型號(hào)： | APT75DQ60BG |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 中文描述： | 超快軟恢復(fù)整流二極管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 140K |
| 代理商： | APT75DQ60BG |
APT75DQ60B(G)_S(G)
0
APT60GT60BR
4
3
1
2
5
5
Zero
1
2
3
4
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
trr - Reverse
R
ecovery Time, measured from zero crossing where
diode
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30
μ
H
D.U.T.
+18V
0V
trr/Qrr
Waveform
Slope = di
M
/dt
6
di
M
/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
6
Vr
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO
-
247 Package Outline
D
3
PAK Package Outline
15.85 (.624)
18.70 (.736)
1.15 (.045)
5.45 (.215) BSC
4.90 (.193)
1.45 (.057)
2.70 (.106)
0.40 (.016)
0.020 (.001)
Dimensions in Millimeters (Inches)
Heat Sink (Cathode)
2.40 (.094)
C
(
1.90 (.075)
Cathode
Anode
1.20 (.047)
12.40 (.488)
13.30 (.524)
1.00 (.039)
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
10.90 (.430) BSC
3.50 (.138)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Dimensions in Millimeters and (Inches)
C
Anode
Cathode
e3
e1 SAC: Tin, Silver, Copper
100% Sn
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT75DQ60S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT75DQ60SG | 制造商:Microsemi Corporation 功能描述:DIODE, ULTRAFAST 600V - Bulk |
| APT75F50B2 | 功能描述:MOSFET N-CH 500V 75A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT75F50L | 功能描述:MOSFET N-CH 500V 75A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT75GL60BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247 |
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