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參數(shù)資料
| 型號： | APT75DQ60S |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 中文描述： | 超快軟恢復(fù)整流二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 140K |
| 代理商： | APT75DQ60S |
0
PRODUCT BENEFITS
Low Losses
Low Noise Switching
Cooler Operation
Higher Reliability Systems
Increased System Power
Density
PRODUCT FEATURES
Ultrafast Recovery Times
Soft Recovery Characteristics
Popular TO-247 Package or
Surface Mount D
3
PAK Package
Low Forward Voltage
Low Leakage Current
Avalanche Energy Rated
PRODUCT APPLICATIONS
Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
Snubber Diode
PFC
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
600V 75A
APT75DQ60B
APT75DQ60BG*
APT75DQ60S
APT75DQ60SG*
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
RM
C
T
UNIT
Volts
μ
A
pF
MIN
TYP
MAX
2.0
2.5
2.4
1.7
25
500
110
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 75A
I
F
= 150A
I
F
= 75A, T
J
= 125°C
V
R
= 600V
V
R
= 600V, T
J
= 125°C
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 108°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
E
AVL
T
J
,T
STG
T
L
UNIT
Volts
Amps
mJ
°C
APT75DQ60B(G)_S(G)
600
75
117
600
20
-55 to 175
300
1 - Cathode
2 - Anode
Back of Case -Cathode
1
2
TO-247
1
2
D
3
PAK
1
2
(S)
(B)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT75DQ60SG | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT75GN120B2 | IGBT |
| APT75GN120B2G | IGBT |
| APT75GN120L | IGBT |
| APT75GN120LG | IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT75DQ60SG | 制造商:Microsemi Corporation 功能描述:DIODE, ULTRAFAST 600V - Bulk |
| APT75F50B2 | 功能描述:MOSFET N-CH 500V 75A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT75F50L | 功能描述:MOSFET N-CH 500V 75A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT75GL60BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247 |
| APT75GN120B2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
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