參數(shù)資料
型號(hào)： APT50M80LVFR
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS V
中文描述： 功率MOS V
文件頁(yè)數(shù)： 4/4頁(yè)
文件大?。?/td> 105K
代理商： APT50M80LVFR
0
APT50M80B2VFR_LVFR
15.49 (.610)
5.38 (.212)
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
Gate
1.01 (.040)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Drain
Source
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
D
19.51 (.768)
19.81 (.780)
25.48 (1.003)
2.29 (.090)
0.762.79 (.110)
3.18 (.125)
3.10 (.122)
4.60 (.181)
1.80 (.071)
2.59 (.102)
0.48 (.019)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
2.29 (.090)
5.79 (.228)
5.45 (.215) BSC
2-Plcs.
T-MAX
(B2) Package Outline
TO-264 (L) Package Outline
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
G
,
I
D
,
I
D
,
C
1
10
100
500
0
10
20
30
40
50
0
100
200
300
400
500
600
700
0.3
0.5
0.7
0.9
1.1
1.3
1.5
232
100
10
1
16
12
8
4
0
30,000
10,000
1,000
100
200
100
10
1
Crss
Coss
Ciss
VDS=250V
VDS=100V
VDS=400V
I
D
= 58A
TJ =+150°C
TJ =+25°C
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
10mS
1mS
100μS
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相關(guān)PDF資料
PDF描述
APT50M85B2VFR WASHER FOR THE SPECTROL 534 SERIES POTENTIOMETER
APT50M85B2VR NUT FOR THE SPECTROL 534 SERIES POTENTIOMETER
APT50M85JVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT50M85LVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT50M85JVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50M80LVFRG 功能描述:MOSFET N-CH 500V 58A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT50M80LVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT50M80LVRG 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube
APT50M85B2VFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT50M85B2VFR_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*