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參數(shù)資料
| 型號： | APT50M80LVFR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS V |
| 中文描述： | 功率MOS V |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 105K |
| 代理商： | APT50M80LVFR |
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Fall Time
APT50M80B2VFR_LVFR
TYP
MAX
8797
1286
562
423
41
214
14
25
64
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -58A)
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Time
(I
S
= -58A,
di
/
dt
= 100A/μs)
Reverse Recovery Charge
(I
S
= -58A,
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -58A,
di
/
dt
= 100A/μs)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 250V
I
D
= 58A @ 25°C
V
GS
= 15V
V
DD
= 250V
I
D
= 58A @ 25°C
R
G
= 0.6
MIN
UNIT
pF
nC
ns
MIN
TYP
MAX
58
232
1.3
5
270
540
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
2.7
5.9
16
22.5
THERMAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.20
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
SINGLE PULSE
Z
θ
J
,
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.05
0.3
0.7
0.9
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L = 1.78mH, R
G
=
25
, Peak I
L
= 58A
5 dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
≤
-
58A
di
/
dt
≤
700A/μs
V
R
≤
500V
T
J
≤
150
°
C
APT Reserves the right to change, without notice, the specifications and information contained herein.
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| APT50M80LVFRG | 功能描述:MOSFET N-CH 500V 58A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT50M80LVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M80LVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
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