參數(shù)資料
型號: APT4030
廠商: Advanced Power Technology Ltd.
英文描述: N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述: ? -通道增強(qiáng)型高壓功率MOSFET
文件頁數(shù): 3/4頁
文件大?。?/td> 52K
代理商: APT4030
I
D
I
D
I
D
V
G
I
D
R
D
(
R
D
(
B
D
V
(
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
0
50 100 150
200
16
12
8
4
0
T
J
= 25
°
C
2
μ
SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
-50 -25 0 25 50 75 100 125 150
-50
-25
0
25
50
75
100
125 150
-50 -25 0 25 50 75 100 125 150
0 2 4 6 8
0 1
2
3
4
5
μ
SEC. PULSE TEST
VD230
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
APT4030CNR
TJ = -55
°
C
25 50
75
100 125 150
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
TJ = +25
°
C
TJ = +125
°
C
15
12
9
6
3
0
4V
4.5V
5V
5.5V
VGS=6V
20
15
10
5
0
12
10
8
6
4
2
0
VGS=10V
6V
5V
4.5V
4V
5.5V
VGS=20V
VGS=10V
1.75
1.50
1.25
1.00
0.75
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
0
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