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參數(shù)資料
| 型號(hào)： | APT4030 |
| 廠(chǎng)商： | Advanced Power Technology Ltd. |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | ? -通道增強(qiáng)型高壓功率MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 52K |
| 代理商： | APT4030 |
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Test Conditions
f = 1 MHz
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 1.80
Characteristic
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
DYNAMIC CHARACTERISTICS
APT4030CNR
MIN
TYP
MAX
15
22
1500
1800
385
540
160
240
71
105
8
12
36
54
14
28
23
46
43
64
15
30
UNIT
pF
nC
ns
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
3
Starting T
j
=
+25
°
C, L = 7.11mH, R
G
=
25
, Peak I
L
= 15A
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Symbol
R
θ
JC
R
θ
JA
Characteristic
Junction to Case
Junction to Ambient
UNIT
Amps
Volts
ns
μ
C
MIN
TYP
MAX
15
60
1.3
284
568
4.5
9.0
UNIT
W/
°
C
MIN
TYP
MAX
0.80
50
THERMAL CHARACTERISTICS
0
Z
θ
J
,
°
C
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT4030AN | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 17A I(D) | TO-3 |
| APT4030BN | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 18.5A I(D) | TO-247AD |
| APT4030BNR | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 18.5A I(D) | TO-247AD |
| APT4030CN | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-254ISO |
| APT4030CNR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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