參數(shù)資料
型號(hào): APT4030
廠商: Advanced Power Technology Ltd.
英文描述: N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述: ? -通道增強(qiáng)型高壓功率MOSFET
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 52K
代理商: APT4030
POWER MOS IV
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
TM
Avalanche Rated
APT4030CNR
400V 15.0A 0.300
0
G
D
S
TO-254
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
μ
A)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
°
C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
3
UNIT
Volts
Amps
Volts
Watts
W/
°
C
°
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
μ
A
nA
Volts
MIN
TYP
MAX
400
15
0.30
250
1000
±
100
4
2
APT4030CNR
400
15
60
±
30
±
40
150
1.2
-55 to 150
300
15
20
800
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 5792 1515
FAX: (33) 5 5647 9761
APT Website - http://www.advancedpower.com
Faster Switching
100% Avalanche Tested
Popular TO-254 Package
Low Gate Charge
Similar to the 2N7227, JX2N7227 and JV2N7227
相關(guān)PDF資料
PDF描述
APT4030CNR N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT40GT60BR The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
APT40M35JVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT40M35PVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT40M42JN XTAL MTL T/H HC49/US
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT4030AN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 17A I(D) | TO-3
APT4030BN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 18.5A I(D) | TO-247AD
APT4030BNR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 18.5A I(D) | TO-247AD
APT4030CN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-254ISO
APT4030CNR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS