參數(shù)資料
型號: APT30N60BC6
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 30 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: TO-247, 3 PIN
文件頁數(shù): 4/5頁
文件大?。?/td> 151K
代理商: APT30N60BC6
050-7209
Rev
A
8-2010
Typical Performance Curves
APT30N60B_SC6
200
400
600
800
1000
1200
5
15
25
35
45
55
0
5
15
25
35
45
1
10
100
200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
20
40
60
80
100
10 15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
0
10
100
1,000
10,000
0
10
20
30
40
50
C
iss
T
J = =25°C
V
DS= 480V
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
C,
CAP
ACIT
ANCE
(pF)
V
DS= 300V
Q
g, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
V
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
I
D (A)
FIGURE 13, Delay Times vs Current
t d(on)
and
t
d(of
f)
(ns)
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
I DR
,REVERSE
DRAIN
CURRENT
(A)
I
D (A)
FIGURE 14 , Rise and Fall Times vs Current
t r,
and
t
f
(ns)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
SWITCHING
ENERGY
(uJ)
0
200
400
600
800
1000
1200
5
10
15
20
25
30
35
40
45
I
D (A)
FIGURE 15, Switching Energy vs Current
SWITCHING
ENERGY
(
μ
J)
C
oss
C
rss
T
J= +150°C
I
D = 30A
V
DD = 400V
R
G = 4.3 Ω
T
J = 125°C
L = 100μH
t
d(on)
t
d(off)
V
DD = 400V
R
G = 4.3Ω
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
E
on
E
off
V
DD = 400V
R
G = 4.3Ω
T
J = 125°C
L = 100μH
t
r
t
f
E
on
E
off
V
DD = 400V
I
D = 30A
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
V
DS= 120V
相關(guān)PDF資料
PDF描述
APT30N60SC6 30 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
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APT4020SVFR 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
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