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參數(shù)資料
| 型號： | APT30N60BC6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 151K |
| 代理商： | APT30N60BC6 |
050-7209
Rev
A
8-2010
DYNAMIC CHARACTERISTICS
APT30N60B_SC6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature
2 Repetitive avalanche causes additional power losses that can be calculated as
PAV = EAR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specications and information contained herein.
4 See MIL-STD-750 Method 3471
5 Eon includes diode reverse recovery.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
0
0.10
0.20
0.30
0.40
0.50
0.60
10-5
10-4
10-3
10-2
0.1
1
10
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
Symbol Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
C
iss
Input Capacitance
V
GS = 0V
V
DS = 25V
f = 1 MHz
2267
pF
C
oss
Output Capacitance
1990
C
rss
Reverse Transfer Capacitance
203
Q
g
Total Gate Charge 4
V
GS = 10V
V
DD = 300V
I
D = 30A @ 25°C
88
nC
Q
gs
Gate-Source Charge
12
Q
gd
Gate-Drain ("Miller") Charge
46
t
d(on)
Turn-on Delay Time
INDUCTIVE SWITCHING
V
GS = 15V
V
DD = 400V
I
D = 30A @ 25°C
R
G = 4.3Ω
9
ns
t
r
Rise Time
17
t
d(off)
Turn-off Delay Time
74
t
f
Fall Time
48
E
on
Turn-on Switching Energy 5
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 30A, RG = 4.3Ω
409
μJ
E
off
Turn-off Switching Energy
224
E
on
Turn-on Switching Energy 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D = 30A, RG = 4.3Ω
649
E
off
Turn-off Switching Energy
282
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
I
S
Continuous Source Current (Body Diode)
26
Amps
I
SM
Pulsed Source Current 1 (Body Diode)
65
V
SD
Diode Forward Voltage 3 (V
GS = 0V, IS = -30A)
1.30
Volts
dv
/
dt
Peak Diode Recovery dv/
dt
6
15
V/ns
t
rr
Reverse Recovery Time
(I
S = -30A,
di
/
dt = 100A/μs)
T
j = 25°C
661
ns
T
j = 125°C
813
Q
rr
Reverse Recovery Charge
(I
S = -30A,
di
/
dt = 100A/μs)
T
j = 25°C
15
μC
T
j = 125°C
18
I
RRM
Peak Recovery Current
(I
S = -30A,
di
/
dt = 100A/μs)
T
j = 25°C
46
Amps
T
j = 125°C
48
Symbol
Characteristic
MIN
TYP
MAX
UNIT
R
θJC
Junction to Case
0.52
°C/W
R
θJA
Junction to Ambient
31
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