- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36707 > APT20GN60SDQ2 (MICROSEMI POWER PRODUCTS GROUP) 40 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APT20GN60SDQ2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 237K |
| 代理商： | APT20GN60SDQ2 |
APT20GN60B_SDQ2(G)
050-7636
Rev
A
1-201
1
0
500
1000
1500
2000
0
10
20
30
40
50
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 4.3Ω
L = 100 μH
SWITCHING
ENERGY
LOSSES
(
μ
J)
E
ON2
,TURN
ON
ENERGY
LOSS
(
μ
J)
t
r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(
μ
J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(
μ
J)
t
f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE = 400V
T
J = 25°C, TJ =125°C
R
G = 4.3Ω
L = 100 μH
12
10
8
6
4
2
0
25
20
15
10
5
0
3500
3000
2500
2000
1500
1000
500
0
250
200
150
100
50
0
140
120
100
80
60
40
20
0
1400
1200
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
V
GE = 15V
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 4.3Ω, L = 100
μ
H, V
CE = 400V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
R
G = 4.3Ω, L = 100
μ
H, V
CE = 400V
V
CE = 400V
V
GE = +15V
R
G = 4.3Ω
T
J = 125°C
T
J = 25°C
V
CE = 400V
V
GE = +15V
R
G = 4.3Ω
T
J = 125°C
T
J = 25°C
E
on2,40A
E
off,40A
E
on2,10A
E
off,20A
E
on2,20A
E
off,10A
V
CE = 400V
V
GE = +15V
T
J = 125°C
V
CE = 400V
V
GE = +15V
R
G = 4.3Ω
E
on2,40A
E
off,40A
E
off,20A
E
on2,20A
E
on2,10A
E
off,10A
TYPICAL PERFORMANCE CURVES
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20GN60BDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60BDQ2 | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60SDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT |
| APT20GS60BRDQ1 | 37 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GS60SRDQ1 | 37 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GN60SG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60BRDQ1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GS60BRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
| APT20GS60KR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。