參數(shù)資料
型號(hào): APT20GN60BDQ2(G)
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 40 A, 600 V, N-CHANNEL IGBT, TO-247
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/9頁
文件大?。?/td> 237K
代理商: APT20GN60BDQ2(G)
050-7636
Rev
A
1-201
1
APT20GN60B_SDQ2(G)
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 2mA)
Gate Threshold Voltage (V
CE = VGE, I C = 290μA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 20A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 20A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
μA
nA
Ω
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT20GN60B_SDQ2(G)
600
±30
40
24
60
60A @ 600V
136
-55 to 175
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 175°C
Switching Safe Operating Area @ T
J = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefcient. Low gate charge simplies gate drive
design and minimizes losses.
600V Field Stop
Trench Gate: Low VCE(on)
Easy Paralleling
6μs Short Circuit Capability
175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
600
5.0
5.8
6.5
1.1
1.5
1.9
1.7
50
TBD
300
N/A
APT20GN60BDQ2 APT20GN60SDQ2
APT20GN60BDQ2(G) APT20GN60SDQ2(G)
600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
TO
-24
7
G
C
E
D3PAK
G
C
E
(S)
(B)
Microsemi Website - http://www.microsemi.com
C
E
G
相關(guān)PDF資料
PDF描述
APT20GN60BDQ2 40 A, 600 V, N-CHANNEL IGBT, TO-247
APT20GN60SDQ2(G) 40 A, 600 V, N-CHANNEL IGBT
APT20GS60BRDQ1 37 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT20GS60SRDQ1 37 A, 600 V, N-CHANNEL IGBT
APT20GS60KR(G) 37 A, 600 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT20GN60BG 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT20GN60K 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT
APT20GN60KG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - SIN - Rail/Tube
APT20GN60S 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT
APT20GN60SDQ1 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT