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參數(shù)資料
| 型號(hào)： | APT20GN60BDQ2(G) |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 237K |
| 代理商： | APT20GN60BDQ2(G) |
APT20GN60B_SDQ2(G)
050-7636
Rev
A
1-201
1
0
500
1000
1500
2000
0
10
20
30
40
50
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 4.3Ω
L = 100 μH
SWITCHING
ENERGY
LOSSES
(
μ
J)
E
ON2
,TURN
ON
ENERGY
LOSS
(
μ
J)
t
r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(
μ
J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(
μ
J)
t
f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE = 400V
T
J = 25°C, TJ =125°C
R
G = 4.3Ω
L = 100 μH
12
10
8
6
4
2
0
25
20
15
10
5
0
3500
3000
2500
2000
1500
1000
500
0
250
200
150
100
50
0
140
120
100
80
60
40
20
0
1400
1200
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
V
GE = 15V
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 4.3Ω, L = 100
μ
H, V
CE = 400V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
R
G = 4.3Ω, L = 100
μ
H, V
CE = 400V
V
CE = 400V
V
GE = +15V
R
G = 4.3Ω
T
J = 125°C
T
J = 25°C
V
CE = 400V
V
GE = +15V
R
G = 4.3Ω
T
J = 125°C
T
J = 25°C
E
on2,40A
E
off,40A
E
on2,10A
E
off,20A
E
on2,20A
E
off,10A
V
CE = 400V
V
GE = +15V
T
J = 125°C
V
CE = 400V
V
GE = +15V
R
G = 4.3Ω
E
on2,40A
E
off,40A
E
off,20A
E
on2,20A
E
on2,10A
E
off,10A
TYPICAL PERFORMANCE CURVES
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| APT20GN60BG | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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