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參數(shù)資料
| 型號(hào)： | APT20GN60SDQ2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 237K |
| 代理商： | APT20GN60SDQ2 |
050-7636
Rev
A
1-201
1
APT20GN60B_SDQ2(G)
BV
CES
,COLLECT
OR-T
O-EMITTER
BREAKDOWN
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
VOL
TAGE
(NORMALIZED)
I
C,
DC
COLLECT
OR
CURRENT(A)
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
V
GE
,GA
TE-T
O-EMITTER
VOL
TAGE
(V)
I C
,COLLECT
OR
CURRENT
(A)
250μs PULSE
TEST<0.5 % DUTY
CYCLE
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J = 25°C)
FIGURE 2, Output Characteristics (T
J = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
15V
12V
11V
10V
13V
9V
8V
T
J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 175°C
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 175°C
14V
40
35
30
25
20
15
10
5
0
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
0
5
10
15
0
20
40
60
80
100
120
140
6
8
10
12
14
16
0
25
50
75
100
125
150
175
-50 -25
0
25
50
75 100 125 150 175
-50 -25
0
25
50
75 100 125 150 175
V
CE = 120V
I
C = 20A
T
J = 25°C
V
CE = 300V
V
CE = 480V
I
C = 40A
I
C = 20A
I
C = 10A
I
C = 40A
I
C = 20A
I
C = 10A
V
GE = 15V
TYPICAL PERFORMANCE CURVES
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20GN60BDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60BDQ2 | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60SDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT |
| APT20GS60BRDQ1 | 37 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GS60SRDQ1 | 37 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GN60SG | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60BRDQ1 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GS60BRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
| APT20GS60KR | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube |
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