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參數(shù)資料
| 型號(hào)： | APT20GF120BRD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 32 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 108K |
| 代理商： | APT20GF120BRD |
20GF120BRD/SRD
MIN
TYP
MAX
70
85
70
160
255
712
12
20
660
1640
15
20
245
160
UNIT
nS
Amps
nC
Volts
A/S
Characteristic/ Test Conditions
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt = -15A/S, V
R
= 30V, T
J
= 25°C
Reverse Recovery Time
T
J
= 25°C
I
F
= 20A, di
F
/dt = -240A/S, V
R
= 650V
T
J
= 100°C
Forward Recovery Time
T
J
= 25°C
I
F
= 20A, di
F
/dt = 240A/S, V
R
= 650V
T
J
= 100°C
Reverse Recovery Current
T
J
= 25°C
I
F
= 20A, di
F
/dt = -240A/S, V
R
= 650V
T
J
= 100°C
Recovery Charge
T
J
= 25°C
I
F
= 20A, di
F
/dt = -240A/S, V
R
= 650V
T
J
= 100°C
Forward Recovery Voltage
T
J
= 25°C
I
F
= 20A, di
F
/dt = 240A/S, V
R
= 650V
T
J
= 100°C
Rate of Fall of Recovery Current
T
J
= 25°C
I
F
= 20A, di
F
/dt = -240A/S, V
R
= 650V (See Figure 18)
T
J
= 100°C
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F/dt Adjust
30H
D.U.T.
+15v
-15v
0v
Vr
4
3
1
2
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F - Forward Conduction Current
I
RRM - Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of IF
Qrr - Area Under the Curve Defined by IRRM and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM.
6
Figure 17, Diode Reverse Recovery Test Circuit and Waveforms
Figure 18, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2 (trr . IRRM)
052-6252
Rev
C
4-2003
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20GF120SRD | 32 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120SRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120BRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GF120BRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GF120SRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GF120BRDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT20GF120BRDQ1G | 功能描述:IGBT 1200V 36A 200W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT20GF120BRG | 功能描述:IGBT 1200V 32A 200W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT20GF120KR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT20GF120KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - SING - Rail/Tube |
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