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參數(shù)資料
| 型號： | APT20GF120BRD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 32 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 108K |
| 代理商： | APT20GF120BRD |
D3PAK
G
C
E
MIN
TYP
MAX
4.5
5.5
6.5
2.7
3.2
3.3
3.9
1
6
±100
Characteristic / Test Conditions
Gate Threshold Voltage
(VCE = VGE, IC = 600A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
UNIT
Volts
mA
nA
Symbol
VGE(TH)
VCE(ON)
ICES
IGES
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Gate-Emitter Voltage
Continuous Collector Current 3
@ TC = 25°C
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1
@ TC = 90°C
RBSOA Clamped Inductive Load Current @ Rg = 11 TC = 125°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
APT20GF120BRD
APT20GF120SRD
1200V
32A
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness
and fast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT & FRED
MAXIMUM RATINGS (IGBT)
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
052-6252
Rev
C
4-2003
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
PD
TJ,TSTG
TL
APT20GF120BRD/SRD
1200
±20
32
20
64
40
200
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20GF120SRD | 32 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120SRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120BRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GF120BRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GF120SRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GF120BRDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT20GF120BRDQ1G | 功能描述:IGBT 1200V 36A 200W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT20GF120BRG | 功能描述:IGBT 1200V 32A 200W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT20GF120KR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT20GF120KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - SING - Rail/Tube |
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