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參數(shù)資料
| 型號(hào)： | APT17N80CC3 |
| 元件分類： | JFETs |
| 英文描述： | 11.5 A, 800 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | TO-254, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 91K |
| 代理商： | APT17N80CC3 |
DYNAMIC CHARACTERISTICS
APT17N80CC3
050-7138
Rev
A
4-2004
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
1.20
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 0 to10V
V
DD = 640V
I
D = 17A @ 25°C
V
GS = 13V
V
DD = 400 V
I
D = 17A
R
G = 4.7, TJ = 125°C
MIN
TYP
MAX
2255
1045
55
90
177
11
45
25
15
70
80
69
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
11.5
34.5
1
1.2
550
15
6
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -11.5A)
Reverse Recovery Time (I
S = -11.5A, dlS/dt = 100A/s) VR = 350V
Reverse Recovery Charge (I
S = -11.5A, dlS/dt = 100A/s) VR = 350V
Peak Diode Recovery dv/dt 5
TO-254 Package Outline
3.81 (.150) BSC
1.14 (.045)
.89 (.035)
Dia. Typ.
3 Leads
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
13.84 (.545)
13.59 (.535)
3.78 (.149)
3.53 (.139)
1.27 (.050)
1.02 (.040)
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
6.91 (.272)
6.81 (.268)
Drain
Source
Gate
Dia.
20.32 (.800)
20.06 (.790)
17.40 (.685)
16.89 (.665)
Dimensions in Millimeters and (Inches)
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 115.92mH, RG = 25, Peak IL = 3.4A
5 I
S = -17A
di/dt = 100A/s V
R = 480V
T
J = 125°C
6 Repetitve avalanche causes additional power losses that can be
calculated as P
AV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT17N80SC3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT17N80SC3G | 功能描述:MOSFET N-CH 800V 17A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT17NTR-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE NPN TRANSISTOR |
| APT17Z-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE NPN TRANSISTOR |
| APT17ZTR-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE NPN TRANSISTOR |
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