參數(shù)資料
型號(hào): APT18H60B
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 18 A, 600 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 262K
代理商: APT18H60B
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
inlbf
Nm
Ratings
18
11
65
±30
495
9
Min
Typ
Max
335
0.37
0.15
-55
150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J,TSTG
T
L
W
T
Torque
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
UPS
Welding
Solar inverters
Telecom rectiers
FEATURES
Fast switching with low EMI
Very Low trr for maximum reliability
Ultra low Crss for improved noise immunity
Low gate charge
Avalanche energy rated
RoHS compliant
TO-247
D3PAK
APT18H60B
APT18H60S
600V, 18A, 0.42 Max, trr ≤160ns
APT18H60B
APT18H60S
N-Channel Ultrafast Recovery FREDFET
Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
Microsemi Website - http://www.microsemi.com
050-8136
Rev
A
5-2007
相關(guān)PDF資料
PDF描述
APT18H60S 18 A, 600 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
APT200GN60JDQ4 283 A, 600 V, N-CHANNEL IGBT
APT200GN60J 250 A, 600 V, N-CHANNEL IGBT
APT20GF120BRD 32 A, 1200 V, N-CHANNEL IGBT, TO-247AD
APT20GF120SRD 32 A, 1200 V, N-CHANNEL IGBT
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