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參數(shù)資料
| 型號(hào)： | APT15GT60BR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 78K |
| 代理商： | APT15GT60BR |
052-6209
Rev
C
5-2002
APT15GT60BR
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN
TYP
MAX
600
34
5
2.0
2.5
2.8
200
1500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
Gate Threshold Voltage
(VCE = VGE, IC = 700A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 150°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
VGE(TH)
VCE(ON)
I CES
IGES
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
A
nA
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
EAS
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage
(RGE = 20K)
Gate Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1
@ TC = 25°C
RBSOA Clamped Inductive Load Current RG = 11 TC = 110°C
Single Pule Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT15GT60BR
600
±20
30
15
60
30
24
125
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT15GT60BR
600V
30A
TO-247
G
C
E
G
C
E
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Thunderbolt IGBT
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PDF描述 |
|---|---|
| APT15GT60BR | 30 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT15GT60KR | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT15GT60KRG | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT17M120JCU2 | 17 A, 1200 V, 0.816 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT17N80CC3 | 11.5 A, 800 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT15GT60BRD | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15GT60BRDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT15GT60BRDQ1G | 功能描述:IGBT 600V 42A 184W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GT60BRG | 功能描述:IGBT 600V 42A 184W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GT60KR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
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